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TPCA8026(TE12L,Q,M Технические параметры
Toshiba Semiconductor and Storage TPCA8026(TE12L,Q,M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Number of Pins | 8Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 45A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 1.6W Ta 45W Tc | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | U-MOSIV | |
| Published | 2009 | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Power Dissipation | 45W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 2.2m Ω @ 23A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4200pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 113nC @ 10V | |
| Rise Time | 15ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 36 ns | |
| Continuous Drain Current (ID) | 45A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 30V | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
TPCA8026(TE12L,Q,M Документы
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