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TTC011B,Q Технические параметры

Toshiba Semiconductor and Storage  TTC011B,Q technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-126N
Mfr Toshiba Semiconductor and Storage
Package Tray
Product Status Active
Current-Collector (Ic) (Max) 1 A
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 1.5 W
Transistor Polarity NPN
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 100
Collector-Emitter Saturation Voltage 1.5 V
Unit Weight 0.029630 oz
Minimum Operating Temperature -
Factory Pack QuantityFactory Pack Quantity 250
Mounting Styles Through Hole
Gain Bandwidth Product fT 100 MHz
Manufacturer Toshiba
Brand Toshiba
Свойство продукта Значение свойства
Maximum DC Collector Current 2 A
DC Current Gain hFE Max 320
RoHS Details
Collector- Emitter Voltage VCEO Max 230 V
Series -
Operating Temperature 150°C (TJ)
Packaging Tray
Subcategory Transistors
Technology Si
Configuration Single
Power - Max 1.5 W
Product Type BJTs - Bipolar Transistors
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Current - Collector Cutoff (Max) 200nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 230 V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 230 V
Continuous Collector Current 1 A
Product Category Bipolar Transistors - BJT
Просмотр сходства
TTC011B,Q brand manufacturers: Toshiba Semiconductor and Storage, Anli stock, TTC011B,Q reference price.Toshiba Semiconductor and Storage. TTC011B,Q parameters, TTC011B,Q Datasheet PDF and pin diagram description download.You can use the TTC011B,Q Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find TTC011B,Q pin diagram and circuit diagram and usage method of function,TTC011B,Q electronics tutorials.You can download from the Anli.