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TTC5200(Q) Технические параметры
Toshiba Semiconductor and Storage TTC5200(Q) technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3PL | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 230V | |
| Collector-Emitter Saturation Voltage | 3V | |
| Number of Elements | 1 Element | |
| hFEMin | 80 | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tray | |
| Published | 2009 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Power Dissipation | 150W | |
| Frequency | 30MHz |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 150W | |
| Gain Bandwidth Product | 30MHz | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 230V | |
| Max Collector Current | 15A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A 5V | |
| Current - Collector Cutoff (Max) | 5μA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 800mA, 8A | |
| Collector Base Voltage (VCBO) | 230V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Height | 26mm | |
| Length | 20.5mm | |
| Width | 5.2mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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