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2N2907A-QR-B Технические параметры

TT Electronics  2N2907A-QR-B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка TT Electronics
Package / Case TO-18-3
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 400 mW
Transistor Polarity PNP
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 100 at 150 mA, 10 V
Свойство продукта Значение свойства
Minimum Operating Temperature - 65 C
Mounting Styles Through Hole
Gain Bandwidth Product fT 200 MHz
Collector- Emitter Voltage VCEO Max 60 V
Technology Si
Configuration Single
Collector Base Voltage (VCBO) 60 V
2N2907A-QR-B brand manufacturers: TT Electronics, Anli stock, 2N2907A-QR-B reference price.TT Electronics. 2N2907A-QR-B parameters, 2N2907A-QR-B Datasheet PDF and pin diagram description download.You can use the 2N2907A-QR-B Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2N2907A-QR-B pin diagram and circuit diagram and usage method of function,2N2907A-QR-B electronics tutorials.You can download from the Anli.