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BDS12 Технические параметры

TT Electronics  BDS12 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка TT Electronics
Package / Case TO220M-3
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 43.75 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 15 at 5 A, 150 V
Свойство продукта Значение свойства
Minimum Operating Temperature - 65 C
Mounting Styles Through Hole
Gain Bandwidth Product fT 3 MHz
Collector- Emitter Voltage VCEO Max 100 V
Technology Si
Configuration Single
Collector Base Voltage (VCBO) 100 V
Просмотр сходства
BDS12 brand manufacturers: TT Electronics, Anli stock, BDS12 reference price.TT Electronics. BDS12 parameters, BDS12 Datasheet PDF and pin diagram description download.You can use the BDS12 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BDS12 pin diagram and circuit diagram and usage method of function,BDS12 electronics tutorials.You can download from the Anli.