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2N5796U Технические параметры

TT Electronics/Optek Technology  2N5796U technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-CLCC
Number of Pins 6Pins
Supplier Device Package 6-CLCC
Collector-Emitter Breakdown Voltage 60V
Collector-Emitter Saturation Voltage 1.6V
Current-Collector (Ic) (Max) 600mA
Number of Elements 2 Elements
hFEMin 75
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Свойство продукта Значение свойства
Max Power Dissipation 600mW
Polarity PNP
Element Configuration Dual
Power Dissipation 600mW
Power - Max 600mW
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Height 2.032mm
Length 6.35mm
Width 4.445mm
Radiation Hardening No
RoHS Status Non-RoHS Compliant

2N5796U Документы

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