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- OPB847
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OPB847 Технические параметры
TT Electronics/Optek Technology OPB847 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Optical Sensors - Photointerrupters - Slot Type - Transistor Output | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | PCB Mount | |
| Number of Pins | 4Pins | |
| Collector-Emitter Breakdown Voltage | 30V | |
| Number of Elements | 1 Element | |
| Operating Temperature | -40°C~85°C | |
| Packaging | Bulk | |
| Published | 2009 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Type | Unamplified | |
| Max Operating Temperature | 85°C | |
| Min Operating Temperature | -40°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Output Configuration | Phototransistor | |
| Power Dissipation | 100mW | |
| Forward Current | 50mA | |
| Response Time | 12μs, 12μs | |
| Rise Time | 20μs | |
| Fall Time (Typ) | 20 μs | |
| Collector Emitter Voltage (VCEO) | 30V | |
| Sensing Distance | 0.100 (2.54mm) | |
| Voltage - Collector Emitter Breakdown (Max) | 30V | |
| Reverse Breakdown Voltage | 2V | |
| Sensing Method | Through-Beam | |
| Max Breakdown Voltage | 30V | |
| Current - DC Forward (If) (Max) | 50mA | |
| Touchscreen | Infrared (IR) | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
OPB847 Документы
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