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UnitedSiC UF3C120080B7S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | UnitedSiC | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | |
| Supplier Device Package | D2PAK-7 | |
| Mfr | UnitedSiC | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 28.8A (Tc) | |
| Power Dissipation (Max) | 190W (Tc) | |
| Base Product Number | UF3C120080 | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Moisture Sensitive | Yes | |
| Typical Turn-On Delay Time | 31 ns, 33 ns | |
| Vgs th - Gate-Source Threshold Voltage | 6 V | |
| Pd - Power Dissipation | 190 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 175 C | |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 800 | |
| Mounting Styles | Through Hole | |
| Channel Mode | Enhancement | |
| Manufacturer | UnitedSiC | |
| Brand | UnitedSiC |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Qg - Gate Charge | 23 nC | |
| Tradename | SiC FET | |
| Rds On - Drain-Source Resistance | 85 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 30 ns | |
| Id - Continuous Drain Current | 28.8 A | |
| Series | - | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Packaging | Cut Tape | |
| Subcategory | MOSFETs | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 12V | |
| Vgs(th) (Max) @ Id | 6V @ 10mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 754 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 12 V | |
| Rise Time | 7 ns, 6 ns | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Vgs (Max) | ±25V | |
| Product Type | MOSFET | |
| FET Feature | - | |
| Product Category | MOSFET |