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UF3C120400B7S Технические параметры

UnitedSiC  UF3C120400B7S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка UnitedSiC
Package / Case 1206 (3216 Metric)
Mounting Type Surface Mount
Supplier Device Package 1206
Package Tape & Reel (TR)
Base Product Number RS73G2BRT
Mfr KOA Speer Electronics, Inc.
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Power Dissipation (Max) 100W (Tc)
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 6 V
Pd - Power Dissipation 100 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 25 V, + 25 V
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Channel Mode Enhancement
Qg - Gate Charge 22.5 nC
Rds On - Drain-Source Resistance 400 mOhms
Id - Continuous Drain Current 5.9 A
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 155°C
Series RS73-RT
Size / Dimension 0.126 L x 0.063 W (3.20mm x 1.60mm)
Tolerance ±0.25%
Number of Terminations 2Terminations
Temperature Coefficient ±50ppm/°C
Resistance 78.7 kOhms
Composition Thick Film
Power (Watts) 0.333W, 1/3W
Technology SiCFET (Silicon Carbide)
Failure Rate -
Number of Channels 1 ChannelChannel
FET Type P-Channel
Rds On (Max) @ Id, Vgs 515mOhm @ 5A, 12V
Vgs(th) (Max) @ Id 6V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 739 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 22.5 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) ±25V
FET Feature -
Features Automotive AEC-Q200
Height Seated (Max) 0.028 (0.70mm)
Ratings AEC-Q200
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