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UJ3N120065K3S Технические параметры

UnitedSiC  UJ3N120065K3S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка UnitedSiC
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Mfr UnitedSiC
Package Tube
Product Status Active
Base Product Number UJ3N120065
Vds - Drain-Source Breakdown Voltage 1200 V
Qualification AEC-Q101
Pd - Power Dissipation 254 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 30
Drain-Source Current at Vgs=0 5 uA
Mounting Styles Through Hole
Manufacturer UnitedSiC
Brand UnitedSiC
Tradename Sic JFET
Свойство продукта Значение свойства
Rds On - Drain-Source Resistance 90 mOhms
RoHS Details
Vgs - Gate-Source Breakdown Voltage - 20 V to 3 V
Id - Continuous Drain Current 34 A
Series -
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tube
Subcategory Transistors
Technology SiC
Configuration Single
Power - Max 254 W
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1008pF @ 100V
Drain to Source Voltage (Vdss) 1.2 V
Product Type JFETs
Current - Drain (Idss) @ Vds (Vgs=0) 5 μA @ 1.2 V
Voltage - Breakdown (V(BR)GSS) 1.2 V
Resistance - RDS(On) 55 mOhms
Current Drain (Id) - Max 34 A
Product Category JFET
Просмотр сходства
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