Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
QM3016M3 Технические параметры
UPI Semiconductor Corp QM3016M3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Description | Antenna adapter - cable assembly | |
| Cable type | RG-174U | |
| Attenuation | 0.15 dB/m | |
| Cable jacket material | FEP fluoroplastic | |
| Gross weight | 6.56 | |
| Transport packaging size/quantity | 46*32*22/1000 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | UPI SEMICONDUCTOR CORP | |
| Package Description | SMALL OUTLINE, S-PDSO-F8 | |
| Drain Current-Max (ID) | 15.7 A | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Connector type | MMCX-P (plug)/ SMA-J (jack) | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | S-PDSO-F8 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Impedance | 50 Ohm | |
| Cable length | 150 ± 2 mm | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating temperature range | -55…+85 °C | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| Frequency range | up to 6 (GSM/2G; 3G4 4G; 5G; 5.8G/433 MHz) GHz | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 317 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Cable diameter | 2.80 mm |
QM3016M3 Документы
- Datasheetsd346a6c8801955c25a1cc4c58a6a3c1f.pdf
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ