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CDR01BP270BJMRMT Технические параметры
Vishay CDR01BP270BJMRMT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Miscellaneous | |
| Марка | Vishay | |
| Package / Case | TO-220-3 | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Pd - Power Dissipation | 188 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 175 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Unit Weight | 0.068784 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 50 | |
| Mounting Styles | Through Hole | |
| Forward Transconductance - Min | 72 S | |
| Channel Mode | Enhancement | |
| Part # Aliases | FDP085N10A_F102 | |
| Manufacturer | onsemi | |
| Brand | onsemi / Fairchild |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Qg - Gate Charge | 31 nC | |
| Rds On - Drain-Source Resistance | 7.35 mOhms | |
| RoHS | Details | |
| Id - Continuous Drain Current | 96 A | |
| Series | FDP085N10A | |
| Packaging | Tube | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Rise Time | 22 ns | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Product Category | MOSFET | |
| Width | 4.7 mm | |
| Height | 16.3 mm | |
| Length | 10.67 mm |
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