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- GN00159R00BE1280
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GN00159R00BE1280 Технические параметры
Vishay GN00159R00BE1280 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Through Hole Resistors | |
| Марка | Vishay | |
| Package / Case | TO-220-3 | |
| Vds - Drain-Source Breakdown Voltage | 800 V | |
| Typical Turn-On Delay Time | 11 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2 V | |
| Pd - Power Dissipation | 29 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V | |
| Unit Weight | 0.068784 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 1000 | |
| Mounting Styles | Through Hole | |
| Forward Transconductance - Min | 1 S | |
| Channel Mode | Enhancement |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | Vishay | |
| Brand | Vishay / Siliconix | |
| Qg - Gate Charge | 19.6 nC | |
| Rds On - Drain-Source Resistance | 2.75 Ohms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 19 ns | |
| Id - Continuous Drain Current | 2.8 A | |
| Series | E | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Rise Time | 7 ns | |
| Product Type | MOSFET | |
| Product Category | MOSFET |
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