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J309-TR1-E3 Технические параметры

Vishay  J309-TR1-E3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка Vishay
ECCN (US) EAR99
Channel Mode Depletion
Number of Elements per Chip 1
Maximum Gate Source Voltage (V) -25
Maximum Gate Source Leakage Current (nA) 1
Maximum IDSS (uA) 30000
Maximum Drain Source Resistance (mOhm) 35000(Typ)
Typical Input Capacitance @ Vds (pF) 4@10V
Typical Reverse Transfer Capacitance @ Vds (pF) 1.9@10V
Typical Forward Transconductance (S) 0.014
Maximum Power Dissipation (mW) 350
Typical Power Gain (dB) 16
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Свойство продукта Значение свойства
Standard Package Name TO-92
Supplier Package TO-92
Military No
Mounting Through Hole
Package Height 4.7(Max)
Package Length 4.7
Package Width 3.68
PCB changed 3
Lead Shape Formed
Packaging Tape and Reel
Part Status Obsolete
Type JFET
Pin Count 3
Configuration Single
Channel Type N
RoHS Status RoHS Compliant
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J309-TR1-E3 Документы

J309-TR1-E3 brand manufacturers: Vishay, Anli stock, J309-TR1-E3 reference price.Vishay. J309-TR1-E3 parameters, J309-TR1-E3 Datasheet PDF and pin diagram description download.You can use the J309-TR1-E3 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find J309-TR1-E3 pin diagram and circuit diagram and usage method of function,J309-TR1-E3 electronics tutorials.You can download from the Anli.