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NSB8ATHE3_B/I Технические параметры

Vishay  NSB8ATHE3_B/I technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Vishay
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB (D²PAK)
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 50
Peak Reverse Repetitive Voltage (V) 50
Maximum Continuous Forward Current (A) 8
Peak Non-Repetitive Surge Current (A) 125
Peak Forward Voltage (V) 1.1
Peak Reverse Current (uA) 10
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Supplier Package D2PAK
Military No
Mounting Surface Mount
Package Height 4.83(Max)
Package Length 10.45(Max)
Package Width 9.14(Max)
PCB changed 2
Tab Tab
Qualification AEC-Q101
Свойство продукта Значение свойства
Factory Pack QuantityFactory Pack Quantity 800
Manufacturer Vishay
Brand Vishay General Semiconductor
RoHS Details
Package Tape & Reel (TR)
Base Product Number NSB8
Mfr Vishay General Semiconductor - Diodes Division
Product Status Active
Packaging Tape and Reel
Series NSB8
Subcategory Diodes & Rectifiers
Pin Count 3
Configuration Single Dual Cathode
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 8 A
Operating Temperature - Junction -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 8A
Product Type Rectifiers
Capacitance @ Vr, F 55pF @ 4V, 1MHz
Product Rectifiers
Product Category Rectifiers

NSB8ATHE3_B/I Документы

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