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RNC55J32R0BS Технические параметры

Vishay  RNC55J32R0BS technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Through Hole Resistors
Марка Vishay
Package / Case SOT-23-3
Vds - Drain-Source Breakdown Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 1.5 V
Pd - Power Dissipation 1.6 W
Transistor Polarity P-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 8 V, + 8 V
Unit Weight 0.000282 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Channel Mode Enhancement
Manufacturer onsemi
Brand onsemi / Fairchild
Свойство продукта Значение свойства
Qg - Gate Charge 10 nC
Rds On - Drain-Source Resistance 108 mOhms
RoHS Details
Id - Continuous Drain Current 1.15 A
Series FDV045P20L
Packaging Cut Tape
Subcategory MOSFETs
Technology Si
Configuration Single
Number of Channels 1 ChannelChannel
Product Type MOSFET
Product Category MOSFET
Width 1.3 mm
Height 1.2 mm
Length 2.9 mm
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