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SI2301CDS-T1-GE3 Технические параметры

Vishay  SI2301CDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка Vishay
Mount Surface Mount
Contact Plating Tin
Number of Pins 3Pins
Weight 1.437803 g
Number of Elements 1 Element
RoHS Compliant
Schedule B 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
Turn Off Delay Time 30 ns
Case/Package SOT-23
Packaging Cut Tape
Resistance 112 mΩ
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 860 mW
Number of Channels 1Channel
Element Configuration Single
Power Dissipation 1.6 W
Свойство продукта Значение свойства
Turn On Delay Time 11 ns
Rise Time 35 ns
Drain to Source Voltage (Vdss) -20 V
Continuous Drain Current (ID) -3.1 A
Threshold Voltage -1 V
Gate to Source Voltage (Vgs) 8 V
Drain to Source Breakdown Voltage -20 V
Input Capacitance 405 pF
Max Junction Temperature (Tj) 150 °C
Drain to Source Resistance 90 mΩ
Rds On Max 112 mΩ
Nominal Vgs -400 mV
Width 1.4 mm
Length 3.04 mm
Height 1.12 mm
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free

SI2301CDS-T1-GE3 Документы

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