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SI2304DDS-T1-GE3 Технические параметры

Vishay  SI2304DDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка Vishay
Contact Plating Tin
Mount Surface Mount
Number of Pins 3Pins
Weight 1.437803 g
Case/Package SOT-23
Number of Elements 1 Element
RoHS Compliant
Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Turn Off Delay Time 12 ns
Resistance 60 mΩ
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 200 mW
Number of Channels 1Channel
Свойство продукта Значение свойства
Element Configuration Single
Power Dissipation 1.1 W
Turn On Delay Time 12 ns
Rise Time 50 ns
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (ID) 3.6 A
Threshold Voltage 2.2 V
Gate to Source Voltage (Vgs) 20 V
Drain to Source Breakdown Voltage 30 V
Input Capacitance 35 pF
Drain to Source Resistance 49 mΩ
Rds On Max 850 mΩ
Nominal Vgs 2.2 V
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free
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