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Vishay SI2304DDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | Vishay | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Number of Pins | 3Pins | |
| Weight | 1.437803 g | |
| Case/Package | SOT-23 | |
| Number of Elements | 1 Element | |
| RoHS | Compliant | |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 | |
| Turn Off Delay Time | 12 ns | |
| Resistance | 60 mΩ | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Max Power Dissipation | 200 mW | |
| Number of Channels | 1Channel |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Power Dissipation | 1.1 W | |
| Turn On Delay Time | 12 ns | |
| Rise Time | 50 ns | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Continuous Drain Current (ID) | 3.6 A | |
| Threshold Voltage | 2.2 V | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain to Source Breakdown Voltage | 30 V | |
| Input Capacitance | 35 pF | |
| Drain to Source Resistance | 49 mΩ | |
| Rds On Max | 850 mΩ | |
| Nominal Vgs | 2.2 V | |
| Radiation Hardening | No | |
| REACH SVHC | No SVHC | |
| Lead Free | Lead Free |