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SI4534DY-T1-GE3 Технические параметры

Vishay  SI4534DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Vishay
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SOIC
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number SI4534
Current - Continuous Drain (Id) @ 25℃ 6.2A (Ta), 8A (Tc), 3A (Ta), 4.1A (Tc)
Mfr Vishay Siliconix
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Свойство продукта Значение свойства
Series TrenchFET®
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
Power - Max 2W (Ta), 3.6W (Tc)
Rds On (Max) @ Id, Vgs 29mOhm @ 5A, 10V, 120mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 30V, 650pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V, 22nC @ 10V
Drain to Source Voltage (Vdss) 60V
FET Feature -
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