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Vishay SI4599DY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | Vishay | |
Lead Shape | Gull-wing | |
Supplier Package | SOIC N | |
Standard Package Name | SOP | |
PCB changed | 8 | |
Package Length | 5(Max) | |
Package Width | 4(Max) | |
Package Height | 1.55(Max) | |
Mounting | Surface Mount | |
Maximum Operating Temperature (°C) | 150 | |
Minimum Operating Temperature (°C) | -55 | |
Typical Turn-On Delay Time (ns) | 7|16@N Channel|44@P Channel | |
Typical Turn-Off Delay Time (ns) | 15|16@N Channel|30|28@P Channel | |
Typical Rise Time (ns) | 10|17@N Channel|12|33@P Channel | |
Typical Fall Time (ns) | 9|10@N Channel|13@P Channel | |
Maximum Power Dissipation (mW) | 2000 | |
Typical Input Capacitance @ Vds (pF) | 640@20V@N Channel|970@20V@P Channel |
Свойство продукта | Значение свойства | |
---|---|---|
Typical Gate Charge @ 10V (nC) | 11.7@N Channel|25@P Channel | |
Typical Gate Charge @ Vgs (nC) | 11.7@10V|[email protected]@N Channel|25@10V|[email protected]@P Channel | |
Maximum Continuous Drain Current (A) | 6.8@N Channel|5.8@P Channel | |
Maximum Gate Source Voltage (V) | ±20 | |
Maximum Drain Source Voltage (V) | 40 | |
Number of Elements per Chip | 2Elements per Chips | |
Channel Mode | Enhancement | |
Process Technology | TrenchFET | |
Category | Power MOSFET | |
PPAP | No | |
Automotive | No | |
ECCN (US) | EAR99 | |
EU RoHS | Not Compliant | |
Part Status | Obsolete | |
Pin Count | 8 | |
Configuration | Dual Dual Drain | |
Channel Type | N|P |