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SI4621DY-T1-GE3 Технические параметры

Vishay  SI4621DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Vishay
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 20
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 3
Maximum Continuous Drain Current (A) 5
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Typical Gate Charge @ Vgs (nC) [email protected]|8.7@10V
Typical Gate Charge @ 10V (nC) 8.7
Typical Input Capacitance @ Vds (pF) 450@10V
Maximum Power Dissipation (mW) 2000
Свойство продукта Значение свойства
Typical Fall Time (ns) 15
Typical Rise Time (ns) 60
Typical Turn-Off Delay Time (ns) 22
Typical Turn-On Delay Time (ns) 15
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 1.55(Max)
Package Width 4(Max)
Package Length 5(Max)
PCB changed 8
Standard Package Name SOP
Supplier Package SOIC N
Lead Shape Gull-wing
Part Status Obsolete
Pin Count 8
Configuration Single Dual Drain
Channel Type P
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