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SIA910EDJ-T1-GE3 Технические параметры

VISHAY  SIA910EDJ-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 12V
Drain current 4.5A
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