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SQJQ936EL-T1_GE3 Технические параметры

Vishay  SQJQ936EL-T1_GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Vishay
Mounting Type Surface Mount
Package / Case PowerPAK® 8 x 8 Dual
Supplier Device Package PowerPAK® 8 x 8 Dual
Package Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Base Product Number SQJQ936
Current - Continuous Drain (Id) @ 25℃ 100A (Tc)
Mfr Vishay Siliconix
Product Status Active
Vds - Drain-Source Breakdown Voltage 40 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Pd - Power Dissipation 75 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Свойство продукта Значение свойства
Mounting Styles SMD/SMT
Channel Mode Enhancement
Qg - Gate Charge 98 nC
Rds On - Drain-Source Resistance 2.3 mOhms
Id - Continuous Drain Current 100 A
Operating Temperature -55°C ~ 175°C (TJ)
Series Automotive, AEC-Q101, TrenchFET®
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel
Number of Channels 2 ChannelChannel
Power - Max 75W (Tc)
Rds On (Max) @ Id, Vgs 2.3mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Drain to Source Voltage (Vdss) 40V
FET Feature Standard
Просмотр сходства
SQJQ936EL-T1_GE3 brand manufacturers: Vishay, Anli stock, SQJQ936EL-T1_GE3 reference price.Vishay. SQJQ936EL-T1_GE3 parameters, SQJQ936EL-T1_GE3 Datasheet PDF and pin diagram description download.You can use the SQJQ936EL-T1_GE3 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find SQJQ936EL-T1_GE3 pin diagram and circuit diagram and usage method of function,SQJQ936EL-T1_GE3 electronics tutorials.You can download from the Anli.