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- VESD05C1-HD1-G3-08
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VESD05C1-HD1-G3-08 Технические параметры
Vishay General Semiconductor - Diodes Division VESD05C1-HD1-G3-08 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | TVS - Diodes | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 0402 (1006 Metric) | |
| Supplier Device Package | DFN1006-2A | |
| Mfr | Vishay General Semiconductor - Diodes Division | |
| Product Status | Active | |
| Base Product Number | VESD05 | |
| Cd - Diode Capacitance | 81 pF | |
| Breakdown Voltage / V | 7.1 V | |
| Maximum Operating Temperature | + 150 C | |
| Vesd - Voltage ESD Contact | 30 kV | |
| Minimum Operating Temperature | - 55 C | |
| Ipp - Peak Pulse Current | 8.7 A | |
| Pppm - Peak Pulse Power Dissipation | 100 W | |
| Vesd - Voltage ESD Air Gap | 30 kV | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Type | Zener | |
| Applications | General Purpose | |
| Termination Style | SMD/SMT | |
| Working Voltage | 5 V | |
| Polarity | Unidirectional | |
| Number of Channels | 1 ChannelChannel | |
| Power Line Protection | No | |
| Voltage - Breakdown (Min) | 7.1V | |
| Power - Peak Pulse | 100W | |
| Current - Peak Pulse (10/1000μs) | 8.7A (8/20μs) | |
| Voltage - Clamping (Max) @ Ipp | 11.5V | |
| Clamping Voltage | 11.5 V | |
| Voltage - Reverse Standoff (Typ) | 5V (Max) | |
| Unidirectional Channels | 1 | |
| Capacitance @ Frequency | 67pF @ 1MHz |
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