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VESD33C1-HD1-G3-08 Технические параметры

Vishay General Semiconductor - Diodes Division  VESD33C1-HD1-G3-08 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация TVS - Diodes
Марка
Mounting Type Surface Mount
Package / Case 0402 (1006 Metric)
Supplier Device Package DFN1006-2A
Mfr Vishay General Semiconductor - Diodes Division
Product Status Active
Base Product Number VESD33
Cd - Diode Capacitance 18 pF
Breakdown Voltage / V 37 V
Maximum Operating Temperature + 150 C
Vesd - Voltage ESD Contact 15 kV
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 10000
Ipp - Peak Pulse Current 1.6 A
Pppm - Peak Pulse Power Dissipation 100 W
Manufacturer Vishay
Brand Vishay Semiconductors
RoHS Details
Vesd - Voltage ESD Air Gap 15 kV
Series -
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 150°C (TJ)
Packaging MouseReel
Type Zener
Applications General Purpose
Subcategory TVS Diodes / ESD Suppression Diodes
Termination Style SMD/SMT
Operating Supply Voltage 33 C
Working Voltage 33 V
Polarity Unidirectional
Number of Channels 1 ChannelChannel
Power Line Protection No
Voltage - Breakdown (Min) 37V
Power - Peak Pulse 100W
Current - Peak Pulse (10/1000μs) 1.6A (8/20μs)
Voltage - Clamping (Max) @ Ipp 62.5V
Clamping Voltage 62.5 V
Voltage - Reverse Standoff (Typ) 33V (Max)
Unidirectional Channels 1
Capacitance @ Frequency 15pF @ 1MHz
Vf - Forward Voltage 1.22 V at 1.6 A
Product Category ESD Suppressors / TVS Diodes
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