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VS-30CTQ100HN3 Технические параметры

Vishay General Semiconductor - Diodes Division  VS-30CTQ100HN3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Mfr Vishay General Semiconductor - Diodes Division
Package Tube
Product Status Active
Current - Average Rectified (Io) (per Diode) 15A
Свойство продукта Значение свойства
Series Automotive, AEC-Q101
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 550 μA @ 100 V
Voltage - Forward (Vf) (Max) @ If 860 mV @ 15 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 100 V
Diode Configuration 1 Pair Common Cathode
Просмотр сходства
VS-30CTQ100HN3 brand manufacturers: Vishay General Semiconductor - Diodes Division, Anli stock, VS-30CTQ100HN3 reference price.Vishay General Semiconductor - Diodes Division. VS-30CTQ100HN3 parameters, VS-30CTQ100HN3 Datasheet PDF and pin diagram description download.You can use the VS-30CTQ100HN3 Diodes - Rectifiers - Arrays, DSP Datesheet PDF, find VS-30CTQ100HN3 pin diagram and circuit diagram and usage method of function,VS-30CTQ100HN3 electronics tutorials.You can download from the Anli.