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VS-ENZ025C60N Технические параметры
Vishay General Semiconductor - Diodes Division VS-ENZ025C60N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Package / Case | EMIPAK | |
| Mfr | Vishay General Semiconductor - Diodes Division | |
| Package | Box | |
| Product Status | Active | |
| Vr - Reverse Voltage | 600 V | |
| Vds - Drain-Source Breakdown Voltage | 600 V | |
| Typical Turn-On Delay Time | 83 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2.6 V | |
| Pd - Power Dissipation | 104 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Factory Pack QuantityFactory Pack Quantity | 100 | |
| Mounting Styles | Press Fit |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | Vishay | |
| Brand | Vishay Semiconductors | |
| Rds On - Drain-Source Resistance | 71 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 111 ns | |
| Id - Continuous Drain Current | 26 A | |
| Series | * | |
| Packaging | Bulk | |
| Type | PressFit Power Module | |
| Subcategory | Discrete Semiconductor Modules | |
| Configuration | 1-Phase Bridge | |
| Rise Time | 26 ns | |
| Product Type | Discrete Semiconductor Modules | |
| Product | Diode Power Modules | |
| Product Category | Discrete Semiconductor Modules |
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