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VS-GB100TP120N Технические параметры

Vishay General Semiconductor - Diodes Division  VS-GB100TP120N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mounting Type Chassis Mount
Package / Case INT-A-Pak
Supplier Device Package INT-A-PAK
Current-Collector (Ic) (Max) 200 A
Base Product Number GB100
Packaging Bulk
Operating Temperature 150°C (TJ)
Свойство продукта Значение свойства
Part Status Obsolete
Configuration Half Bridge
Power - Max 650 W
Input Standard
Current - Collector Cutoff (Max) 5 mA
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 7.43 nF @ 25 V
Просмотр сходства
VS-GB100TP120N brand manufacturers: Vishay General Semiconductor - Diodes Division, Anli stock, VS-GB100TP120N reference price.Vishay General Semiconductor - Diodes Division. VS-GB100TP120N parameters, VS-GB100TP120N Datasheet PDF and pin diagram description download.You can use the VS-GB100TP120N Transistors - IGBTs - Modules, DSP Datesheet PDF, find VS-GB100TP120N pin diagram and circuit diagram and usage method of function,VS-GB100TP120N electronics tutorials.You can download from the Anli.