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VS-GP300TD60S Технические параметры

Vishay General Semiconductor - Diodes Division  VS-GP300TD60S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mounting Type Chassis Mount
Package / Case Dual INT-A-PAK (3 + 8)
Supplier Device Package Dual INT-A-PAK
Current-Collector (Ic) (Max) 580 A
Base Product Number GP300
Packaging Tube
Operating Temperature -40°C ~ 150°C (TJ)
Свойство продукта Значение свойства
Part Status Obsolete
Configuration Half Bridge
Power - Max 1136 W
Input Standard
Current - Collector Cutoff (Max) 150 µA
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 1.45V @ 15V, 300A
IGBT Type PT, Trench
NTC Thermistor No
Просмотр сходства
VS-GP300TD60S brand manufacturers: Vishay General Semiconductor - Diodes Division, Anli stock, VS-GP300TD60S reference price.Vishay General Semiconductor - Diodes Division. VS-GP300TD60S parameters, VS-GP300TD60S Datasheet PDF and pin diagram description download.You can use the VS-GP300TD60S Transistors - IGBTs - Modules, DSP Datesheet PDF, find VS-GP300TD60S pin diagram and circuit diagram and usage method of function,VS-GP300TD60S electronics tutorials.You can download from the Anli.