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VS-GT75YF120NT Технические параметры
Vishay General Semiconductor - Diodes Division VS-GT75YF120NT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Modules | |
| Марка | ||
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | - | |
| Mfr | Vishay General Semiconductor - Diodes Division | |
| Package | Box | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 118 A | |
| Collector- Emitter Voltage VCEO Max | 1.2 kV | |
| RoHS | Details | |
| Brand | Vishay Semiconductors | |
| Manufacturer | Vishay | |
| Mounting Styles | Screw Mounts | |
| Continuous Collector Current at 25 C | 118 A | |
| Factory Pack QuantityFactory Pack Quantity | 12 | |
| Minimum Operating Temperature | - 40 C | |
| Collector-Emitter Saturation Voltage | 2.2 V |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 431 W | |
| Maximum Gate Emitter Voltage | - 20 V, + 20 V | |
| Series | - | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Packaging | Bulk | |
| Subcategory | IGBTs | |
| Technology | Si | |
| Configuration | Full Bridge | |
| Power - Max | 431 W | |
| Input | Standard | |
| Product Type | IGBT Transistors | |
| Current - Collector Cutoff (Max) | 100 μA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 75A | |
| IGBT Type | Trench Field Stop | |
| NTC Thermistor | Yes | |
| Product Category | IGBT Transistors |
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