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IRFR1N60ATRPBF Технические параметры
Vishay Intertechnologies IRFR1N60ATRPBF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Surface Mount | YES | |
| Material | polyester, self-extinguishing | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Transport packaging size/quantity | 102*20*20/500 | |
| Operating ambient temperature | -55...+150 °C | |
| Diameter coverage | 5 (+3) mm | |
| Type of capacitor | ceramic | |
| Kind of capacitor | MLCC | |
| Mounting | SMD | |
| Case - inch | 0603 | |
| Case - mm | 1608 | |
| Capacitors series | KGF | |
| Gross weight | 0.032 g | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-252AA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Drain Current-Max (ID) | 1.4 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Packaging | spool - 100m | |
| Operating temperature | -55...125°C | |
| Tolerance | ±5% | |
| JESD-609 Code | e3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Type | self-wrapping cable sleeve | |
| Terminal Finish | Matte Tin (Sn) | |
| Color | black | |
| Capacitance | 5.6nF | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Dielectric | X7R | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Note | reusable | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252AA | |
| Drain-source On Resistance-Max | 7 Ω | |
| Pulsed Drain Current-Max (IDM) | 5.6 A | |
| DS Breakdown Voltage-Min | 600 V | |
| Avalanche Energy Rating (Eas) | 93 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 36 W | |
| Saturation Current | 1 | |
| Operating voltage | 100V | |
| Width | 30 ±2 mm |
IRFR1N60ATRPBF Документы
- Datasheets335111000b69724139d2649ddb8da820.pdf
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