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SI1013R-T1-GE3 Технические параметры
Vishay Intertechnologies SI1013R-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SC-75A, 3 PIN | |
| Drain Current-Max (ID) | 0.35 A | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Type of capacitor | ceramic | |
| Kind of capacitor | MLCC | |
| Mounting | SMD | |
| Case - inch | 0603 | |
| Case - mm | 1608 | |
| Capacitors series | KGQ | |
| Gross weight | 0.04 | |
| Transport packaging size/quantity | 29*21*28/5000 | |
| Type of fuse | Self-recovering fuse series SMD1206 | |
| Maximum voltage | 30 V | |
| Interrupt current | 1.0 A | |
| Holding current | 0.5 A | |
| Operating temperature | -55...125°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Tolerance | ±2% | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Additional Feature | LOW THRESHOLD | |
| Capacitance | 33pF | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Depth | 1.5-1.8 mm | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Dielectric | C0G (NP0) | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Response time | 0.1 s | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Operating temperature range | -40...+85 °C | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.175 W | |
| Saturation Current | 1 | |
| Operating voltage | 100V | |
| Height | 0.35-0.85 mm | |
| Width | 3.0-3.5 mm |
SI1013R-T1-GE3 Документы
- Datasheets972f41ca485b22e38a287a80cca7e3f7.pdf
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