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- SI2312BDS-T1-GE3
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SI2312BDS-T1-GE3 Технические параметры
Vishay Intertechnologies SI2312BDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Surface Mount | YES | |
| Weight | 0.8 kg | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Type of capacitor | ceramic | |
| Kind of capacitor | MLCC | |
| Mounting | SMD | |
| Case - inch | 1206 | |
| Case - mm | 3216 | |
| Capacitors series | KGM | |
| Gross weight | 825.00 | |
| Transport packaging size/quantity | 35*16*17/10 | |
| Analog | POS40 | |
| Melting temperature | 183...240 °C | |
| Soldering temperature | 285...330 °C | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, SOT-23, 3 PIN | |
| Drain Current-Max (ID) | 3.9 A | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating temperature | -55...125°C | |
| Packaging | coil | |
| Tolerance | ±20% | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Type | Soft lead-tin solder Sn/Pb | |
| Terminal Finish | MATTE TIN | |
| Composition | lead - 40%; tin - 60% | |
| Capacitance | 1µF | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Dielectric | X7R | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-236AB | |
| Form | wire | |
| Drain-source On Resistance-Max | 0.031 Ω | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.75 W | |
| Saturation Current | 1 | |
| Operating voltage | 16V | |
| Diameter | 1.5 mm |
SI2312BDS-T1-GE3 Документы
- Datasheets4dca081b69b27e007e6d2fc482f311a2.pdf
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