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Vishay Intertechnologies SI4190ADY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Factory Lead Time | 28 Weeks | |
| Surface Mount | YES | |
| Housing material | nickel-plated brass | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | |
| Drain Current-Max (ID) | 18.4 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Gross weight | 44.00 | |
| Transport packaging size/quantity | 62*27*28/50 | |
| Indicator type | dot | |
| Switching scheme | ON-OFF + OFF-ON with fixing | |
| Protection class | IP65 | |
| Number of switching cycles (electrical) | ≥50000 | |
| Backlight voltage | 12 V | |
| Relative humidity | 45...85 % | |
| Nominal voltage | 250 V | |
| Dielectric strength | 2000 (50 Hz / 5 s) V | |
| LED operating life | ≥40000 hours |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Head and button shape | flat ring and button | |
| Mounting diameter | 25 mm | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G8 | |
| Contact resistance | ≤50 mΩ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation resistance | ≥1000 MΩ | |
| Operating Mode | ENHANCEMENT MODE | |
| Switch type | GQ25 series vandal-proof button with backlight | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating temperature range | -25…+55 °C | |
| Rated current | 5 A | |
| JEDEC-95 Code | MS-012AA | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| DS Breakdown Voltage-Min | 100 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Saturation Current | 1 | |
| Contacts | 4Pin+2Pin | |
| Backlight color | blue | |
| Diameter | 28 mm |