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SI4816BDY-T1-GE3 Технические параметры

Vishay Intertechnologies  SI4816BDY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 18 Weeks
Surface Mount YES
Body material nickel-plated brass
Number of Terminals 8Terminals
Transistor Element Material SILICON
Exterior Housing Material 2
Package Style SMALL OUTLINE
Package Shape RECTANGULAR
Package Body Material PLASTIC/EPOXY
Operating Temperature-Min -55 °C
Operating Temperature-Max 150 °C
Drain Current-Max (ID) 5.8 A
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Life Cycle Code Active
Rohs Code Yes
Mounting diameter 28 mm
Head and button shape ring - cone; flat button
LED operating life ≥40000 hours
Dielectric strength 2000 (50 Hz / 5 s) V
Gross weight 1 g
Kind of package reel,
Mounting SMD
Case SOP8
Kind of integrated circuit PWM controller
Type of integrated circuit PMIC
Relative humidity 45...85 %
Illuation color bluemin
Illumination voltage 12 V
Switching cycles (electric) ≥50000
Protection class IP65
Свойство продукта Значение свойства
Switching scheme ON-(OFF) + OFF-(ON) without fixation
Indicator type dot
Transport packaging size/quantity 62*27*28/50
Operating temperature -40...85°C
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Frequency 0.5MHz
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Contact resistance ≤50 mOhm
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Insulation resistance ≥1000 MOhm
Operating Mode ENHANCEMENT MODE
Output current 1A
Switch type GQ28 series vandal-proof button with illumination
Polarity/Channel Type N-CHANNEL
Operating temperature range -25…+55 °C
Rated current 5 A
JEDEC-95 Code MS-012AA
Drain-source On Resistance-Max 0.0185 Ω
DS Breakdown Voltage-Min 30 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2.4 W
Rated voltage 250 V
Saturation Current 1
Contacts 4Pin+2Pin
Diameter 32 mm

SI4816BDY-T1-GE3 Документы

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