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SI7315DN-T1-GE3 Технические параметры

Vishay Intertechnologies  SI7315DN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 17 Weeks, 4 Days
Contact Plating silver
Surface Mount YES
Housing Material brass
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Cable Type SCF-12-50, RK 50-9-35
Operating Frequency Range 7.5 GHz
Contact Material brass
Mounting Method cable mount
Gross Weight 55.30
Transport Packaging size/quantity 42*28*18.5/100
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Drain Current-Max (ID) 8.9 A
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
JESD-609 Code e3
ECCN Code EAR99
Свойство продукта Значение свойства
Connector Type 7/16 DIN plug
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code S-PDSO-C5
Configuration SINGLE WITH BUILT-IN DIODE
Insulation Resistance 10000 MOhm min
Impedance 50 Ohm
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Operating Temperature Range -40…+85 °C
Drain-source On Resistance-Max 0.315 Ω
Pulsed Drain Current-Max (IDM) 10 A
DS Breakdown Voltage-Min 150 V
Avalanche Energy Rating (Eas) 9.8 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Saturation Current 1
Degree of Protection IP68

SI7315DN-T1-GE3 Документы

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