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Vishay Intertechnologies SI7450DP-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Color actuator/housing | metal (Ф10 mm)/black | |
| Gross weight | 24.40 | |
| Transport package size/quantity | 42*28*18.5/500 | |
| Maximum voltage | 125/250 (AC) V | |
| Mounting hole size | 12.2 mm | |
| Switching scheme | 2x ON - ON with latching, DPDT (6P) | |
| Construction features | side-mounted contacts (for soldering) | |
| Switching cycles (electrical) | 50000 min | |
| Dielectric strength | 1000 (50 Hz / 1 min.) V | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Drain Current-Max (ID) | 3.2 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Type | PBS-24 series pushbutton switch |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Position | DUAL | |
| Terminal Form | C BEND | |
| Peak Reflow Temperature (Cel) | 260 | |
| Depth | 42.2 mm | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-XDSO-C5 | |
| Qualification Status | Not Qualified | |
| Contact resistance | 20 mΩ max | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation resistance | 500 (at Uisol.dc=500 V) MΩ min | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Rated current | 5/2 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| DS Breakdown Voltage-Min | 200 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 5.2 W | |
| Saturation Current | 1 | |
| Height | 17.2 (housing); 27 (total) mm | |
| Width | 12.2 (housing); 23.5 (total) mm |