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- SI7850DP-T1-GE3
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SI7850DP-T1-GE3 Технические параметры
Vishay Intertechnologies SI7850DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Factory Lead Time | 17 Weeks, 3 Days | |
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | POWERPAK, SO-8 | |
| Drain Current-Max (ID) | 6.2 A | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Turn-off Time-Max (toff) | 74 ns | |
| Turn-on Time-Max (ton) | 40 ns | |
| Type of capacitor | ceramic | |
| Kind of capacitor | MLCC | |
| Mounting | SMD | |
| Case - inch | 1206 | |
| Case - mm | 3216 | |
| Capacitors series | KAM | |
| Gross weight | 0.026 g | |
| Operating temperature | -55...125°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Tolerance | ±10% | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Capacitance | 1µF | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-F8 | |
| Qualification Status | Not Qualified | |
| Dielectric | X7R | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| DS Breakdown Voltage-Min | 60 V | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Saturation Current | 1 | |
| Operating voltage | 50V |
SI7850DP-T1-GE3 Документы
- Datasheetsa420429b9b11e25652510908595f2467.pdf
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