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Vishay Intertechnologies SI8851EDB-T2-E1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Surface Mount | YES | |
| Number of Terminals | 30Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Type of enclosure | multipurpose | |
| Dimension X | 208mm | |
| Dimension Y | 208mm | |
| Dimension Z | 56mm | |
| Enclosure series | AUG | |
| Enclosure material | aluminium | |
| Body colour | black | |
| Side colour | grey | |
| Dimensions | See | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | GRID ARRAY, R-PBGA-B30 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY | |
| ECCN Code | EAR99 | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PBGA-B30 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 0.0086 Ω | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |