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SIA461DJ-T1-GE3 Технические параметры

Vishay Intertechnologies  SIA461DJ-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 16 Weeks
Surface Mount YES
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Collector current 100A
Case SEMITRANS2
Type of module IGBT
Semiconductor structure transistor/transistor
Max. off-state voltage 1.7kV
Electrical mounting FASTON connectors,
Gate-emitter voltage ±20V
Pulsed collector current 300A
Mechanical mounting screw
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
Drain Current-Max (ID) 12 A
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Свойство продукта Значение свойства
Package Style SMALL OUTLINE
JESD-609 Code e3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code S-PDSO-N3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Topology IGBT half-bridge
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain-source On Resistance-Max 0.033 Ω
Pulsed Drain Current-Max (IDM) 20 A
DS Breakdown Voltage-Min 20 V
FET Technology METAL-OXIDE SEMICONDUCTOR
2nd Connector Number of Positions Loaded for UPS,
Saturation Current 1

SIA461DJ-T1-GE3 Документы

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