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SIHG120N60E-GE3 Технические параметры

Vishay Intertechnologies  SIHG120N60E-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 13 Weeks
Surface Mount NO
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Date Of Intro 2018-09-17
Drain Current-Max (ID) 25 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Turn-off Time-Max (toff) 128 ns
Turn-on Time-Max (ton) 168 ns
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247AC
Drain-source On Resistance-Max 0.12 Ω
Pulsed Drain Current-Max (IDM) 66 A
DS Breakdown Voltage-Min 600 V
Avalanche Energy Rating (Eas) 88 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 179 W
Feedback Cap-Max (Crss) 6 pF
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SIHG120N60E-GE3 Документы

SIHG120N60E-GE3 brand manufacturers: Vishay Intertechnologies, Anli stock, SIHG120N60E-GE3 reference price.Vishay Intertechnologies. SIHG120N60E-GE3 parameters, SIHG120N60E-GE3 Datasheet PDF and pin diagram description download.You can use the SIHG120N60E-GE3 Transistors - Special Purpose, DSP Datesheet PDF, find SIHG120N60E-GE3 pin diagram and circuit diagram and usage method of function,SIHG120N60E-GE3 electronics tutorials.You can download from the Anli.