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SIHG22N60E-GE3 Технические параметры

Vishay Intertechnologies  SIHG22N60E-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Surface Mount NO
Housing material nickel-plated brass
Number of Terminals 3Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Gross weight 3.55
Transport packaging size/quantity 62*27.5*28/200
Emitter type point flat
Indicator type GQ6 series vandal-resistant indicator
Teral type flexible leadsmin
Mounting diameter 6 mm
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Drain Current-Max (ID) 21 A
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
ECCN Code EAR99
Свойство продукта Значение свойства
Color red
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Rated current 15 mA
JEDEC-95 Code TO-247AC
Drain-source On Resistance-Max 0.18 Ω
Pulsed Drain Current-Max (IDM) 56 A
DS Breakdown Voltage-Min 600 V
Avalanche Energy Rating (Eas) 367 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 227 W
Rated voltage 12-24 V

SIHG22N60E-GE3 Документы

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