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- SIR472DP-T1-GE3
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SIR472DP-T1-GE3 Технические параметры
Vishay Intertechnologies SIR472DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | 8-SIP Module, 7 Leads | |
| Surface Mount | YES | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Terminal Material | 5V | |
| Exterior Housing Material | 1 | |
| Mfr | Traco Power | |
| Standard Number | 62368-1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Drain Current-Max (ID) | 14 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Series | TEC 3UI (3W) | |
| Packaging | Tube | |
| Operating Temperature | -40°C ~ 90°C | |
| Size / Dimension | 0.88" L x 0.39" W x 0.44" H (22.3mm x 10.0mm x 11.3mm) | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Type | Isolated Module |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | MATTE TIN | |
| Applications | ITE (Commercial) | |
| Power (Watts) | 3 W | |
| Terminal Position | DUAL | |
| Terminal Form | C BEND | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-C5 | |
| Number of Outputs | 1Output | |
| Qualification Status | Not Qualified | |
| Approval Agency | CB | |
| Efficiency | 79% | |
| Voltage - Isolation | 2 kV | |
| Voltage - Input (Max) | 75V | |
| Voltage - Input (Min) | 9V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Current - Output (Max) | 600mA | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 24 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 29.8 W | |
| Features | Remote On/Off |
SIR472DP-T1-GE3 Документы
- Datasheets5339d7fa475024cb496cf55d38cd87b2.pdf
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