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SIR626DP-T1-RE3 Технические параметры

Vishay Intertechnologies  SIR626DP-T1-RE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 16 Weeks, 3 Days
Surface Mount YES
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Date Of Intro 2017-03-22
Drain Current-Max (ID) 100 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Turn-off Time-Max (toff) 78 ns
Свойство продукта Значение свойства
Turn-on Time-Max (ton) 88 ns
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.002 Ω
Pulsed Drain Current-Max (IDM) 200 A
DS Breakdown Voltage-Min 60 V
Avalanche Energy Rating (Eas) 125 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 104 W

SIR626DP-T1-RE3 Документы

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