ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply

SIR638DP-T1-GE3 Технические параметры

Vishay Intertechnologies  SIR638DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 28 Weeks
Surface Mount YES
Housing material nickel-plated brass
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SOP-8
Date Of Intro 2016-05-01
Drain Current-Max (ID) 100 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Turn-off Time-Max (toff) 120 ns
Turn-on Time-Max (ton) 82 ns
Gross weight 32.20
Transport packaging size/quantity 28.5*21*19/50
Indicator type ring
Switching scheme ON-(OFF) + OFF-(ON) non-latching
Protection class IP65
Switching cycles (electrical) 50000 min
Backlight voltage 12 V
Relative humidity 45...85 %
Nominal voltage 250 V
Dielectric strength 2000 (50 Hz / 5 sec) V
Свойство продукта Значение свойства
LED service life 40000 hours min
Button head shape flat ring and button
Installation diameter 22 mm
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Contact resistance 50 mΩ max
Configuration SINGLE WITH BUILT-IN DIODE
Insulation resistance 1000 MΩ min
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Switch type GQ22 series vandal resistant button with backlight
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Operating temperature range -25…+55 °C
Rated current 5 A
Drain-source On Resistance-Max 0.00088 Ω
Pulsed Drain Current-Max (IDM) 400 A
DS Breakdown Voltage-Min 40 V
Avalanche Energy Rating (Eas) 125 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 104 W
Feedback Cap-Max (Crss) 250 pF
Contacts 4Pin+2Pin
Backlight color green
Diameter 25 mm

SIR638DP-T1-GE3 Документы

SIR638DP-T1-GE3 brand manufacturers: Vishay Intertechnologies, Anli stock, SIR638DP-T1-GE3 reference price.Vishay Intertechnologies. SIR638DP-T1-GE3 parameters, SIR638DP-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SIR638DP-T1-GE3 Transistors - Special Purpose, DSP Datesheet PDF, find SIR638DP-T1-GE3 pin diagram and circuit diagram and usage method of function,SIR638DP-T1-GE3 electronics tutorials.You can download from the Anli.