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- SIR662DP-T1-GE3
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SIR662DP-T1-GE3 Технические параметры
Vishay Intertechnologies SIR662DP-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Housing material | nickel-plated brass | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Dielectric strength | 2000 (50 Hz / 5 s) V | |
| LED working life | ≥40000 hours | |
| Head and button shape | flat ring and button | |
| Mounting diameter | 30 mm | |
| Gross weight | 76.00 | |
| Transport packaging size/quantity | 62*27*28/50 | |
| Indicator type | dot | |
| Switching scheme | ON-OFF + OFF-ON with fixation | |
| Protection class | IP65 | |
| Number of switching cycles (electrical) | ≥50000 | |
| Backlight voltage | 12 V | |
| Relative humidity | 45...85 % | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Drain Current-Max (ID) | 60 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Position | DUAL | |
| Terminal Form | C BEND | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-XDSO-C5 | |
| Qualification Status | Not Qualified | |
| Contact resistance | ≤50 mΩ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Insulation resistance | ≥1000 MΩ | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Switch type | GQ30 series vandal-proof button with backlight | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating temperature range | -25…+55 °C | |
| Rated current | 5 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| DS Breakdown Voltage-Min | 60 V | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 104 W | |
| Rated voltage | 250 V | |
| Saturation Current | 1 | |
| Contacts | 4Pin+2Pin | |
| Backlight color | blue | |
| Diameter | 35 mm |
SIR662DP-T1-GE3 Документы
- Datasheets2f7f00374016385b3544a52ef4637a91.pdf
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