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SISA12ADN-T1-GE3 Технические параметры

Vishay Intertechnologies  SISA12ADN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 18 Weeks, 3 Days
Surface Mount YES
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Type of module IGBT
Semiconductor structure transistor/transistor
Max. off-state voltage 1.2kV
Collector current 75A
Case MiniSKiiP® 3
Electrical mounting Press-Fit
Gate-emitter voltage ±20V
Pulsed collector current 150A
Mechanical mounting screw
Gross weight 82 g
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Drain Current-Max (ID) 25 A
Operating Temperature-Max 150 °C
Свойство продукта Значение свойства
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
ECCN Code EAR99
Terminal Position DUAL
Terminal Form C BEND
Reach Compliance Code unknown
JESD-30 Code S-PDSO-C5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Topology IGBT three-phase bridge,
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.0043 Ω
Pulsed Drain Current-Max (IDM) 80 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 11 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 28 W
2nd Connector Number of Positions Loaded for UPS,
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SISA12ADN-T1-GE3 Документы

SISA12ADN-T1-GE3 brand manufacturers: Vishay Intertechnologies, Anli stock, SISA12ADN-T1-GE3 reference price.Vishay Intertechnologies. SISA12ADN-T1-GE3 parameters, SISA12ADN-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SISA12ADN-T1-GE3 Transistors - Special Purpose, DSP Datesheet PDF, find SISA12ADN-T1-GE3 pin diagram and circuit diagram and usage method of function,SISA12ADN-T1-GE3 electronics tutorials.You can download from the Anli.