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SISHA12ADN-T1-GE3 Технические параметры

Vishay Intertechnologies  SISHA12ADN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 10 Weeks
Surface Mount YES
Number of Terminals 8Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ,
Date Of Intro 2018-12-13
Drain Current-Max (ID) 25 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Turn-off Time-Max (toff) 75 ns
Turn-on Time-Max (ton) 40 ns
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N8
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain-source On Resistance-Max 0.0043 Ω
Pulsed Drain Current-Max (IDM) 80 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 11 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 28 W
Feedback Cap-Max (Crss) 51 pF
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SISHA12ADN-T1-GE3 Документы

SISHA12ADN-T1-GE3 brand manufacturers: Vishay Intertechnologies, Anli stock, SISHA12ADN-T1-GE3 reference price.Vishay Intertechnologies. SISHA12ADN-T1-GE3 parameters, SISHA12ADN-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SISHA12ADN-T1-GE3 Transistors - Special Purpose, DSP Datesheet PDF, find SISHA12ADN-T1-GE3 pin diagram and circuit diagram and usage method of function,SISHA12ADN-T1-GE3 electronics tutorials.You can download from the Anli.