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SISS27ADN-T1-GE3 Технические параметры

Vishay Intertechnologies  SISS27ADN-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Factory Lead Time 18 Weeks
Surface Mount YES
Number of Terminals 5Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Type of capacitor ceramic
Kind of capacitor MLCC
Capacitance tolerance ±0.5pF
Mounting SMD
Case - inch 0201
Case - mm 0603
Capacitors series GCQ
Gross weight 0.03 g
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Date Of Intro 2017-03-22
Drain Current-Max (ID) 50 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Свойство продукта Значение свойства
Turn-off Time-Max (toff) 102 ns
Turn-on Time-Max (ton) 45 ns
Operating temperature -55...125°C
ECCN Code EAR99
Capacitance 9.7pF
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N5
Dielectric C0G (NP0)
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Polarity/Channel Type P-CHANNEL
Drain-source On Resistance-Max 0.0051 Ω
Pulsed Drain Current-Max (IDM) 200 A
DS Breakdown Voltage-Min 30 V
Avalanche Energy Rating (Eas) 31 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 57 W
Feedback Cap-Max (Crss) 440 pF
Operating voltage 50V

SISS27ADN-T1-GE3 Документы

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