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- SIZ300DT-T1-GE3
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SIZ300DT-T1-GE3 Технические параметры
Vishay Intertechnologies SIZ300DT-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Housing material | nickel-plated brass | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 2 | |
| Gross weight | 33.00 | |
| Transport packaging size/quantity | 62*27.5*28/100 | |
| Indicator type | dot | |
| Switching scheme | ON-(OFF) + OFF-(ON) without fixation | |
| Protection class | IP65 | |
| Number of switching cycles (electrical) | ≥50000 | |
| Illumination voltage | 12 V | |
| Illuation color | redmin | |
| Relative humidity | 45...85 % | |
| Nominal voltage | 250 V | |
| Dielectric strength | 2000 (50 Hz / 5 s) V | |
| LED working life | ≥40000 hours | |
| Button and head shape | flat ring and button | |
| Mounting diameter | 22 mm | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAIR-8 | |
| Drain Current-Max (ID) | 11 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | S-XDSO-N8 | |
| Contact resistance | ≤50 mΩ | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Insulation resistance | ≥1000 MΩ | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN SOURCE | |
| Switch type | GQ22 series anti-vandal illuminated button | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating temperature range | -25…+55 °C | |
| Rated current | 5 A | |
| Drain-source On Resistance-Max | 0.024 Ω | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Avalanche Energy Rating (Eas) | 7 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 31 W | |
| Contacts | 4Pin+2Pin | |
| Diameter | 25 mm |
SIZ300DT-T1-GE3 Документы
- Datasheetsb4768208aa4b6f5f583fa19d14bf2785.pdf
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